These structures are used to reduce parasitic capacitance and resistance, and thus maximize the transistor's intrinsic performance. In a Si bipolar transistor (BJT) and a SiGe heterojunction bipolar transistor (HBT), self-aligned structures help to improve high-speed and high-frequency characteristics. Readership: Researchers, industrialists and academics in electrical and electronic engineering. RSFQ Technology: Circuits and Systems (D K Brock).RSFQ Technology: Physics and Devices (P Bunyk et al.).Cantilevered Base InP DHBT for High Speed Digital Applications (A L Gutierrez-Aitken et al.).Progress Toward 100 GHz Logic in InP HBT IC Technology (C H Fields et al.).Scaling of InGaAs/InAlAs HBTs for High Speed Mixed-Signal and mm-Wave ICs (M J W Rodwell).Prospects of InP-Based IC Technologies for 100-Gbit/S-Class Lightwave Communications Systems (T Enoki et al.).Small-Scale InGaP/GaAs Heterojunction Bipolar Transistors for High-Speed and Low-Power Integrated-Circuit Applications (T Oka et al.).Self-Aligned Si BJT/SiGe HBT Technology and Its Application to High-Speed Circuits (K Washio).High-Performance Si and SiGe Bipolar Technologies and Circuits (M Wurzer et al.).
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The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. This book reviews the state of the art of very high speed digital integrated circuits.